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TC58BYG2S0HBAI6 - 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

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Description

The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

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Datasheet Details

Part number TC58BYG2S0HBAI6
Manufacturer Toshiba
File Size 357.49 KB
Description 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
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TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages). The TC58BYG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
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