TC58DVM92A5TA00 Overview
The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512...
TC58DVM92A5TA00 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
- Mode control Serial input/output mand control
- Power supply VCC = 2.7 V to 3.6 V
- Access time Cell array to register 25 μs max Serial Read Cycle 40 ns min
- Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 2.5 ms/block typ
- Operating current Read (40 ns cycle) Program (avg.) Erase (avg.) Standby
- Package TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)