TC58NVG0S3AFT00 datasheet by Toshiba.
| Part number | TC58NVG0S3AFT00 |
|---|---|
| Datasheet | TC58NVG0S3AFT00_Toshiba.pdf |
| File Size | 441.26 KB |
| Manufacturer | Toshiba |
| Description | 1 GBit CMOS NAND EPROM |
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The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for mand inputs.
| Part Number | Description |
|---|---|
| TC58NVG0S3AFT05 | 1 GBit CMOS NAND EPROM |
| TC58NVG0S3ETA00 | 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HBAI4 | 1G BIT (128M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG0S3HBAI6 | 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HTA00 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HTAI0 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3BFT00 | 2-GBit CMOS NAND EPROM |
| TC58NVG1S3EBAI4 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG1S3ETA00 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3ETAI0 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
