Description
The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks.
Features
- x Organization Memory cell allay 2112 u 64K u 8 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 Cycles(With ECC) x Access time Cell array to register 25 Psmax Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ. Erase (avg. ) 10 mA typ. Standby 50 PA.
TC58NVG0S3AFT00 Datasheet
