TC58NVG0S3AFT00 Datasheet | Toshiba

.. TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1GBIT (128M u 8BITS) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages). The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins...