• Part: TC58NVG0S3AFT05
  • Description: 1 GBit CMOS NAND EPROM
  • Manufacturer: Toshiba
  • Size: 629.01 KB
TC58NVG0S3AFT05 Datasheet (PDF) Download
Toshiba
TC58NVG0S3AFT05

Overview

  • Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control * *
  • Powersupply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles (With ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 µA max Package TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.) * * *