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TC58NVG0S3AFT05 - 1 GBit CMOS NAND EPROM

General Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks.

Key Features

  • Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control.
  • Powersupply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles (With ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ. Erase (.

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TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM
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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCRIPTION The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.