TC58NVG2S0HBAI6 Description
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: The TC58NVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
TC58NVG2S0HBAI6 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
- Mode control Serial input/output mand control
- Number of valid blocks Min 2008 blocks Max 2048 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 25 µs max Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8 bit ECC for each 512Byte is required