TC58NVG2S0HBAI6
Overview
The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
- Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 2008 blocks Max 2048 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 25 µs max Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 2.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8 bit ECC for each 512Byte is required. 1
