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TC7WH00FU - Dual 2-Input NAND Gate

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Description

2.

Features

  • (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High speed operation: tpd = 3.7 ns (typ. ) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) High noise immunity: VNIH = VNIL = 28 % VCC (min) (5) 5.5 V tolerant inputs (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage range: VCC = 2.0 to 5.5 V (8) Identical pin assignment and function with TC7W00 Note 1: For devices with the ordering part number ending in J(CT. Topr.

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Datasheet Details

Part number TC7WH00FU
Manufacturer Toshiba
File Size 143.30 KB
Description Dual 2-Input NAND Gate
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CMOS Digital Integrated Circuits Silicon Monolithic TC7WH00FU TC7WH00FU 1. Functional Description • Dual 2-Input NAND Gate 2. Features (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High speed operation: tpd = 3.7 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) High noise immunity: VNIH = VNIL = 28 % VCC (min) (5) 5.5 V tolerant inputs (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage range: VCC = 2.0 to 5.5 V (8) Identical pin assignment and function with TC7W00 Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85  for the other devices. 3.
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