• Part: TEC8012
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 76.05 KB
Download TEC8012 Datasheet PDF
Toshiba
TEC8012
FEATURES . Excellent h FE Linearity : h FE(2)=23(Min.) at VCE =-l V, I C =- 400m A . 1 Watt Amplifier Application . plementary to TEC8013 51 MAX. : - ' it CL45 j Q55MAX. ,| Q45 ' < S C5 r-i MAXIMUM RATINGS (Ta=25°C) . CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING -40 -30 -5 -500 -100 625 150 -55-150 UNIT V V V m A m A m W °C °C , x , in c5 ( n-^> Imp ipip l jg 1 2 3/ ,-, ^ ^y 1. EMITTER 2. BASE 3. COLLECTOR JEDEC E I AJ TOSHi BA Weight...