TEC8013 - Silicon NPN Transistor

Datasheet Summary

Features

. Excellent hpg Linearity : h FE (2)=23(Min. ) at VcE=lV, I c =400mA . 1 Watt Amplifier.

Toshiba

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Datasheet Details

Part number	TEC8013
Manufacturer	Toshiba
File Size	75.96 KB
Description	Silicon NPN Transistor
Datasheet	TEC8013 Datasheet
Additional preview pages of the TEC8013 datasheet.

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Full PDF Text Transcription

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC8013 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. FEATURES . Excellent hpg Linearity : h FE (2)=23(Min.) at VcE=lV, I c =400mA . 1 Watt Amplifier Applications . Complementary to TEC8012 Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT 1.27 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VCBO VCEO VEBO IC IB PC 40 30 500 mA 100 mA 625 mW 1. EMITTER 2. BASE 3. COLLECTOR Junction Temperature Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) 150 -55-150 EIAJ TOSHIBA Weight : 0.

Published: Jun 9, 2024 |