• Part: TEC8013
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 75.96 KB
Download TEC8013 Datasheet PDF
Toshiba
TEC8013
FEATURES . Excellent hpg Linearity : h FE (2)=23(Min.) at Vc E=l V, I c =400m A . 1 Watt Amplifier Applications . plementary to TEC8012 Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VCBO VCEO VEBO IC IB PC 40 30 500 m A 100 m A 625 m W 1. EMITTER 2. BASE 3. COLLECTOR Junction Temperature Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) -55-150 EIAJ TOSHIBA Weight : 0.21g SC-43 2-5 Pi V CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL ICBO l EBO h FE(l) (Note) TEST CONDITION VCB=35V, l£=0 VEB=5V, I C=0 VCE=1V, Ic=50m A MIN. - 64 TYP. - MAX. 0.1 0.1 202 UNIT Collector-Emitter Saturation Voltage h FE(2) VCE=1V, I C=400m A Vc E(sat) IC=100m A, l B=50ra A - - - 0.1 0.25 Base-Emitter...