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TK12E80W - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power d.

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Datasheet Details

Part number TK12E80W
Manufacturer Toshiba
File Size 414.87 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK12E80W Datasheet

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12E80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.