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TK12P50W - N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (N.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12P50W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.5 A Drain current (pulsed) (Note 1) IDP 46.0 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 167 mJ Avalanche current IAR 3.