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TK15H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C
○ Switching Regulator Applications
Unit: mm
• Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode
: Vth = 2.0 to 4.
TK15H50C Datasheet
