TK170V65Z Datasheet PDF - Toshiba Silicon N-Channel MOSFET Specs

TK170V65Z - Silicon N-Channel MOSFET

Datasheet Summary

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.142 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK170V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified).

Datasheet Details

Part number	TK170V65Z
Manufacturer	Toshiba
File Size	468.60 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK170V65Z Datasheet
Additional preview pages of the TK170V65Z datasheet.

📁 Similar Datasheet

TK17010 - LOW VOLTAGE OPERATIONAL AMPLIFIER (TOKO)

TK17010M - LOW VOLTAGE OPERATIONAL AMPLIFIER (TOKO)

TK17010MTL - LOW VOLTAGE OPERATIONAL AMPLIFIER (TOKO)

TK17011M - LOW VOLTAGE OPERATIONAL AMPLIFIER (TOKO)

TK17A25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK17A25D - N-Channel MOSFET (INCHANGE)

TK17A65U - MOSFETs (Toshiba Semiconductor)

TK17A65U - N-Channel MOSFET (INCHANGE)

TK17A65W - Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK17A65W - N-Channel MOSFET (INCHANGE)

Full PDF Text Transcription

Click to expand full text

MOSFETs Silicon N-Channel MOS (DTMOS) TK170V65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.142 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK170V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin. 4.

Published: Dec 30, 2023 |