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TK20V60W - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.136 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise s.

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Datasheet Details

Part number TK20V60W
Manufacturer Toshiba
File Size 239.24 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK20V60W Datasheet
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MOSFETs Silicon N-Channel MOS (DTMOS) TK20V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.136 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4.
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