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TK4R9E15Q5 - Silicon N-channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trr = 50 ns (typ. ) (2) Small reverse recovery charge : Qrr = 50 nC (typ. ) (3) Small gate charge: QSW = 26 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 4.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK4R9E15Q5 TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporat.

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Datasheet Details

Part number TK4R9E15Q5
Manufacturer Toshiba
File Size 520.15 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK4R9E15Q5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R9E15Q5 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Fast reverse recovery time: trr = 50 ns (typ.) (2) Small reverse recovery charge : Qrr = 50 nC (typ.) (3) Small gate charge: QSW = 26 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK4R9E15Q5 TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-07 2024-06-17 Rev.1.0 TK4R9E15Q5 4.