Click to expand full text
MOSFETs Silicon N-Channel MOS (π-MOS)
TK5A50D5
1. Applications
• Switching Voltage Regulators
2. Features
(1) Fast reverse recovery time: trrf = 40 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 1.62 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK5A50D5
TO-220SIS
1: Gate (G) 2: Drain (D) 3: Source (S)
©2016-2018 Toshiba Electronic Devices & Storage Corporation
1
2018-06-19 Rev.1.0
TK5A50D5
4.
TK5A50D5 Datasheet
