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TK6R4E10PL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ. ) (3) Small output charge: Qoss = 58 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK6R4E10PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Datasheet Details

Part number TK6R4E10PL
Manufacturer Toshiba
File Size 620.15 KB
Description Silicon N-channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK6R4E10PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.) (3) Small output charge: Qoss = 58 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK6R4E10PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2018-01 2021-01-25 Rev.2.0 TK6R4E10PL 4.
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