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MOSFETs Silicon N-channel MOS (U-MOS�-H)
TK6R7A10PL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.) (3) Small output charge: Qoss = 58 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.7 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK6R7A10PL
TO-220SIS
1: Gate 2: Drain 3: Source
©2017-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2018-01
2021-01-27 Rev.2.0
TK6R7A10PL
4.
TK6R7A10PL Datasheet
