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TK7S10N1Z - Silicon N-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (.

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Datasheet Details

Part number TK7S10N1Z
Manufacturer Toshiba
File Size 271.62 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1Z 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4.
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