TK90S06N1L
TK90S06N1L is N-channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- Automotive
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
©2016-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2014-05
2020-06-24 Rev.5.0
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