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TLP250F Datasheet PDF

Toshiba TLP250F

TLP250F is suitable for gate driving circuit of IGBT or power MOS FET.
Part No. TLP250F
Datasheet TLP250F Download
Manufacturer
Toshiba
Description Photocoupler
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TLP250F datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) TLP250F Characteristic Symbol Rating Unit LE D Forward current Forward current derating (Ta ≥ 70°C) Peak transient forward curent Reverse voltage Diode power dissipation Diode power dissipation derating (Ta≥70°C) (Note 1) IF ΔIF / ΔTa IFPT VR PD △PD /°C 20 -0.36 1 5 40 -0.72 mA mA / °C A V mW mW / °C Junction temperature Tj 125 °C “H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPH -1.5 A “L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPL +1.5 A Output voltage (Ta ≤ 70°C) 35 VO V (Ta ≤ 85°C) 24 Detector Supply voltage (Ta ≤ 70°C) 35 VCC V (Ta ≤ 85°C) 24 Output voltage derating (Ta ≥ 70°C) Supply voltage derating (Ta ≥ 70°C) Power dissipation Power dissipation derating (Ta ≥ 70°C) Junction temperature ΔVO / ΔTa ΔVCC / ΔTa PC ΔPC / °C Tj -0.73 -0.73 800 -14.5 125 V / °C V / °C mW mW / °C °C Operating frequency (Note 3) f 25 kHz Operating temperature range Storage temperature range Lead soldering temperature (10 s) Isolation voltage (A...
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