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TOSHIBA MOS MEMORY PRODUCT
2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS
TMM2018AO-25, TMM2018AO-35 TMM2018AO-45
IOESCRI PTI ONI
The TMM2018AD is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~12018AD is offered in a 24 pin standard cerdip package with 0.
TMM2018AD Datasheet
