TMM27512D - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Product Overview

Toshiba

Part number	TMM27512D
Manufacturer	Toshiba
File Size	329.95 KB
Description	N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet	TMM27512D Datasheet
Additional preview pages of the TMM27512D datasheet.

The TMM27512D is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read memory.

-200 -250 I !5V±10% ~~----~-------r------~-2-0-0--ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode. The TMM27512D is fabricated with N-channel silicon double layer gate MOS technology.
Full static operation.
High speed programming mode.
Inputs and outputs.

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Other Datasheets by Toshiba

TMM27512D-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512D-200 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512D-25 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512D-250 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512DI - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512DI-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Published: Jan 22, 2017 |