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TMM27512D - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Description

The TMM27512D is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read memory.

For read operation, the TMM27512D's access time is 200ns/250ns.

Features

  • -200 -250 I !5V±10% ~~----~-------r------~-2-0-0--ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode. The TMM27512D is fabricated with N-channel silicon double layer gate MOS technology.
  • Full static operation.
  • High speed programming mode.
  • Inputs and outputs.

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Datasheet preview – TMM27512D

Datasheet Details

Part number TMM27512D
Manufacturer Toshiba
File Size 329.95 KB
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet download datasheet TMM27512D Datasheet
Additional preview pages of the TMM27512D datasheet.

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Other Datasheets by Toshiba
  • TMM27512D-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
  • TMM27512D-200 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
  • TMM27512D-25 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
  • TMM27512D-250 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 8 BIT N-MOS UV ERASABLE AND EL- TMM27512D-20,TMM27512D-200 ECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY TMM27512D-25,TMM27512D-250 DESCRIPTION The TMM27512D is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read memory. For read operation, the TMM27512D's access time is 200ns/250ns. The TMM27512D operates from a single 5volt power supply and has a low power standby mode which FEATURES -200 -250 I !5V±10% ~~----~-------r------~-2-0-0--ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode.
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