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TMM27512DI - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Description

The TMM27512DI is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read only memory.

For read operation, the TMM27512DI's access time is 200ns/250ns.

Features

  • Vee tAec lee2 leel -15 150ns I 5V±5% I 120mA 35mA -20 200ns.
  • Wide operating temparature range -40-85°C.
  • Full static operation.
  • High speed programming mode.
  • Inputs and outputs TIL compatible.
  • Pin compatible with.

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Datasheet preview – TMM27512DI

Datasheet Details

Part number TMM27512DI
Manufacturer Toshiba
File Size 326.47 KB
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Datasheet download datasheet TMM27512DI Datasheet
Additional preview pages of the TMM27512DI datasheet.

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Other Datasheets by Toshiba
  • TMM27512DI-20 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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  • TMM27512D - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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  • TMM27512D-200 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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  • TMM27512D-250 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 8 BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY TMM27512DI~20 TMM27512DI-25 DESCRIPTION The TMM27512DI is a 65,536 word X 8 bit ultraviolet light erasable and electrically programmable read only memory. For read operation, the TMM27512DI's access time is 200ns/250ns. The TMM27512DI operates from a single 5volt power supply and has a low power standby mode which reduces power dissipation without increasing access time. The standby mode is achieved by applying a TIL-high level signal to the CE input. For program operation, the programming is achieved by using the high speed prgramming mode. TMM27512DI is fabricated with N-channel silicon double layer gate MOS technology.
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