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TMM41464P-12 - DRAM

Description

The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP.

Features

  • 65,536 words by 4 bit organization.
  • Fast access Time and cycle time DEVICE TMM41464P-12 tRAC 120ns teAe 60ns tnc 220ns TMM41464P-15 150ns 75ns 260ns.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • Low power: 385mW Operating (MAX. ) (TMM41464-12) PIN.

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Other Datasheets by Toshiba

Part Number Description
TMM41464P-15 DRAM
TMM41464AP-10 DRAM
TMM41464AP-12 DRAM
TMM41464AP-15 DRAM
TMM41464AT-10 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 4 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41464P-12 TMM41464P-15 DESCRIPTION The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP. The TMM41464P utilizes TOSHIBA's N-channel/ Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TM M FEATURES • 65,536 words by 4 bit organization • Fast access Time and cycle time DEVICE TMM41464P-12 tRAC 120ns teAe 60ns tnc 220ns TMM41464P-15 150ns 75ns 260ns • Single power supply of 5V± 10% with a built-in VBB generator • Low power: 385mW Operating (MAX.
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