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TMM41464P-15 - DRAM

Download the TMM41464P-15 datasheet PDF. This datasheet also covers the TMM41464P-12 variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

Description

The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP.

Features

  • 65,536 words by 4 bit organization.
  • Fast access Time and cycle time DEVICE TMM41464P-12 tRAC 120ns teAe 60ns tnc 220ns TMM41464P-15 150ns 75ns 260ns.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • Low power: 385mW Operating (MAX. ) (TMM41464-12) PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMM41464P-12-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TMM41464P-12 DRAM
TMM41464AP-10 DRAM
TMM41464AP-12 DRAM
TMM41464AP-15 DRAM
TMM41464AT-10 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 4 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41464P-12 TMM41464P-15 DESCRIPTION The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP. The TMM41464P utilizes TOSHIBA's N-channel/ Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TM M FEATURES • 65,536 words by 4 bit organization • Fast access Time and cycle time DEVICE TMM41464P-12 tRAC 120ns teAe 60ns tnc 220ns TMM41464P-15 150ns 75ns 260ns • Single power supply of 5V± 10% with a built-in VBB generator • Low power: 385mW Operating (MAX.
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