Datasheet Summary
FCH35N60 N-Channel MOSFET
March 2013
FCH35N60
N-Channel SuperFET® MOSFET
600 V, 35 A, 98 mΩ Features
- 650 V @ TJ = 150°C
- Typ.RDS(on) = 79 mΩ
- Ultra Low Gate Charge ( Typ. Qg = 139 nC )
- Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
- 100% Avalanche Tested
Description
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable...
