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TMP86FH09NG - 8 Bit Microcontroller

General Description

SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 79 mΩ.
  • Ultra Low Gate Charge ( Typ. Qg = 139 nC ).
  • Low Effective Output Capacitance (Typ. Coss. eff = 340 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCH35N60 N-Channel MOSFET March 2013 FCH35N60 N-Channel SuperFET® MOSFET 600 V, 35 A, 98 mΩ Features • 650 V @ TJ = 150°C • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.