Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 6.9 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.)
- High forward transfer admittance: |Yfs| =32 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)...