Datasheet4U Logo Datasheet4U.com

TPC8074 - N-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPC8074 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-sour.

📥 Download Datasheet

Datasheet Details

Part number TPC8074
Manufacturer Toshiba
File Size 250.79 KB
Description N-Channel MOSFET
Datasheet download datasheet TPC8074 Datasheet

More Datasheets from Toshiba

Part Number Description
TPC8073 N-Channel MOSFET
TPC8007-H N-Channel MOSFET
TPC8024-H Silicon N-Channel MOS Type Field Effect Transistor
TPC8026 N-Channel MOSFET
TPC8037-H N-Channel MOSFET
TPC8053-H Silicon N-Channel MOSFET
TPC8061-H Silicon N-Channel MOSFET
TPC8065-H Silicon N-Channel MOSFET
TPC8089H Silicon N-Channel MOSFET
TPC8125 Silicon P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (U-MOS) TPC8074 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPC8074 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.