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TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
TPC8405
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications
TPC8405
Unit: mm
z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.) N Channel RDS (ON) = 20 mΩ (typ.)
z High forward transfer admittance : P Channel |Yfs| = 12S (typ.) N Channel |Yfs| = 14S (typ.)
z Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V)
z Enhancement-mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.3 to 2.
TPC8405 Datasheet
