TPC8405
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U- MOS IV/N Channel U-MOS III)
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications
Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.) N Channel RDS (ON) = 20 mΩ (typ.) z High forward transfer admittance : P Channel |Yfs| = 12S (typ.) N Channel |Yfs| = 14S (typ.) z Low leakage current : P Channel IDSS =
- 10 μA (VDS =
- 30 V) N Channel IDSS = 10 μA (VDS = 30 V) z Enhancement-mode
: P Channel Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Rating Symbol P Channel N Channel Unit
Drain-source voltage
VDSS
- 30
Drain-gate voltage (RGS = 20 kΩ)
VDGR
- 30
Gate-source voltage
VGSS
±20
±20
DC Drain current
Pulse
(Note 1) ID
- 4.5
(Note 1) IDP
- 18
Drain power dissipation
Single-device...
