TPC8406-H
TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII)
High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
Unit: mm
- Small footprint due to a small and thin package
- High speed switching
- Low drain-source ON-resistance: P-Channel RDS (ON) = 24 mΩ (typ.)
N-Channel RDS (ON) = 22 mΩ (typ.)
- Small gate charge:
P-Channel QSW = 9.7 n C (typ.)
N-Channel QSW = 3.5 n C (typ.)
- High forward transfer admittance: P-Channel |Yfs| = 13 S (typ.)
N-Channel |Yfs| = 14 S (typ.)
- Low leakage current: P-Channel IDSS =
- 10 μA (VDS =
- 40 V) N-Channel IDSS = 10 μA (VDS = 40 V)
- Enhancement mode
: P-Channel Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
: N-Channel Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Rating
Symbol
Unit
P-Channel N-Channel
Drain-source voltage
VDSS
-...
