TPC8406-H - Field Effect Transistor

Toshiba

Datasheet Details

Part number	TPC8406-H
Manufacturer	Toshiba
File Size	312.70 KB
Description	Field Effect Transistor
Datasheet	TPC8406-H Datasheet

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TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm • Small footprint due to a small and thin package • High speed switching • Low drain-source ON-resistance: P-Channel RDS (ON) = 24 mΩ (typ.) N-Channel RDS (ON) = 22 mΩ (typ.) • Small gate charge: P-Channel QSW = 9.7 nC (typ.) N-Channel QSW = 3.5 nC (typ.) • High forward transfer admittance: P-Channel |Yfs| = 13 S (typ.) N-Channel |Yfs| = 14 S (typ.) • Low leakage current: P-Channel IDSS = −10 μA (VDS = −40 V) N-Channel IDSS = 10 μA (VDS = 40 V) • Enhancement mode : P-Channel Vth = −0.8 to −2.