Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
Unit: mm
1.27 0.4 ± 0.1
0.05 M A
6.0 ± 0.3 5.0 ± 0.2
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 18 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 96 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 80 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0...