TPCA8055-H - Silicon N-Channel MOSFET

Toshiba

Key Features

(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 21 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCA8055-H 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating U.

TPCA8055-H silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCA8055-H
Manufacturer	Toshiba
File Size	281.48 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCA8055-H Datasheet

Full PDF Text Transcription for TPCA8055-H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8055-H. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8055-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin packag...

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rs • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 21 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCA8055-H 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.

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