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TPCA8082 - MOSFETs

Key Features

  • (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.

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Full PDF Text Transcription for TPCA8082 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8082. For precise diagrams, and layout, please refer to the original PDF.

TPCA8082 MOSFETs Silicon N-Channel MOS (U-MOS) TPCA8082 1. Applications • • Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small, thin package Low drain-source...

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dsets 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.

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