TPCA8083 - MOSFETs

Product Overview

Toshiba

Part number	TPCA8083
Manufacturer	Toshiba
File Size	232.63 KB
Description	MOSFETs
Datasheet	TPCA8083 Datasheet
Additional preview pages of the TPCA8083 datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.

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Published: Sep 3, 2014 |