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TPCA8121 - Field Effect Transistor

Key Features

  • (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current.

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Datasheet Details

Part number TPCA8121
Manufacturer Toshiba
File Size 256.48 KB
Description Field Effect Transistor
Datasheet download datasheet TPCA8121 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8121 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance 4.