Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- - Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 5, 6, 7, 8: Drain
4: Gate
SOP Advance
4....