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TPCA8128
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅵ)
TPCA8128
Lithium Ion Battery Applications Power Management Switch Applications
8
Unit: mm
1.27 0.4 ± 0.1 5 0.05 M A
• • • •
Small footprint due to compact and slim package Low leakage current : IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A )
0.95 ± 0.05 1 6.0 ± 0.3 5.0 ± 0.2
Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.)
0.15 ± 0.05
4
0.595 A
5.0 ± 0.2
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg
Rating −30 −30 −25/+20 −34 −102 45
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Unit V V V A
0.6 ± 0.1
1
4
4.25 ± 0.
TPCA8128 Datasheet
