TPCA8120 - Silicon P-Channel MOSFET

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Toshiba

Part number	TPCA8120
Manufacturer	Toshiba
File Size	228.93 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCA8120 Datasheet
Additional preview pages of the TPCA8120 datasheet.

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCA8120 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30.

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Published: Nov 11, 2013 |