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TPCA8120 - Silicon P-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCA8120 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30.

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Datasheet Details

Part number TPCA8120
Manufacturer Toshiba
File Size 228.93 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCA8120 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8120 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCA8120 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.