Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS- )
1. Applications
- Motor Drivers
- DC-DC Converters
- Switching Voltage Regulators
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2012-07
2023-12-11 Rev.5.0
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