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TPCC8070 - Silicon N-Channel MOSFET

Features

  • (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8070 4. Absolute Maximum Ratings (Note) (Ta = 25.

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Datasheet Details

Part number TPCC8070
Manufacturer Toshiba
File Size 276.32 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCC8070 Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS�) TPCC8070 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8070 4.
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