Datasheet4U Logo Datasheet4U.com

TPCC8076 Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

📥 Download Datasheet

Overview

MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8076 1.

Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2.

Key Features

  • (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 33 V Ga.

More Datasheets from Toshiba

Part Number Description
TPCC8070 Silicon N-Channel MOSFET
TPCC8073 MOSFETs
TPCC8074 Field Effect Transistor
TPCC8061-H Field Effect Transistor
TPCC8062-H MOSFETs
TPCC8064-H MOSFETs
TPCC8065-H Field Effect Transistor
TPCC8066-H MOSFETs
TPCC8067-H Silicon N-Channel MOSFET
TPCC8069 MOSFET