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TPH1500CNH - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1500CNH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2014-12 1 2014-11-07 Rev.4.0 TPH1500CNH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherw.

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Datasheet Details

Part number TPH1500CNH
Manufacturer Toshiba
File Size 234.55 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH1500CNH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1500CNH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1500CNH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2014-12 1 2014-11-07 Rev.4.0 TPH1500CNH 4.