TPH4R008QM
Features
(1) High-speed switching (2) Small gate charge: QSW = 18 n C (typ.) (3) Small output charge: Qoss = 60 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.6 m A)
3. Packaging and Internal Circuit
SOP Advance(N)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2019-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2020-02
2020-02-21 Rev.1.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 1)
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
Drain current (pulsed)
(t = 100 µs)
(Note 1)
Power dissipation
(Tc = 25 )
Power dissipation
(Note 3)
Power...
