Datasheet4U Logo Datasheet4U.com

TPH4R008NH1 - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ. ) (3) Small output charge: Qoss = 77 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R008NH1 SOP Advance(N) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPH4805D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH4805DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH4805S 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH4809D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH4809DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPH4R008NH Silicon N-channel MOSFET
TPH4R008QM Silicon N-channel MOSFET
TPH4R003NL Silicon N-channel MOSFET
TPH4R10ANL Silicon N-channel MOSFET
TPH4R50ANH Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS�-H) TPH4R008NH1 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Small output charge: Qoss = 77 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R008NH1 SOP Advance(N) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-03 2020-11-09 Rev.3.0 TPH4R008NH1 4.