Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2013-10
2019-10-18 Rev.5.0
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