TPH5R906NH - MOSFETs

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Toshiba

Part number	TPH5R906NH
Manufacturer	Toshiba
File Size	235.68 KB
Description	MOSFETs
Datasheet	TPH5R906NH Datasheet
Additional preview pages of the TPH5R906NH datasheet.

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 18 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Dra.

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Published: Sep 4, 2014 |