TPH9R00CQH Datasheet | Toshiba

MOSFETs Silicon N-channel MOS (U-MOS- -H) 1. Applications - High-Efficiency DC-DC Converters - Switching Voltage Regulators - Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 11.7 nC (typ.) (3) Small output charge: Qoss = 87 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.3 to 4.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For...