TPN2R805PL Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 12 n C (typ.) (3) Small output charge: Qoss = 32 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 m A) 3. Packaging and Internal Circuit TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-07 2019-10-30 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1) Drain current (DC) (Silicon limit) (Note 1), (Note 2) Drain current (pulsed) (t = 100 µs) (Note 1) Power dissipation (Tc = 25 ) Power dissipation (Note 3) Power dissipation (Note...