TPN2R903PL Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 5.6 n C (typ.) (3) Small output charge: Qoss = 17 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.2 m A) 3. Packaging and Internal Circuit TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-08 2019-10-30 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage (Note 1) VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 2) Drain current (DC) (Silicon limit) (Note 2), (Note 3) Drain current (pulsed) (t = 100 µs) (Note 2) Power dissipation (Tc = 25 ) Power dissipation (Note 4) Power...