Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 6.8 nC (typ.) (3) Small output charge: Qoss = 20 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-12
2016-06-30 Rev.1.0
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