TPN7R006PL Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R006PL 1.

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.

(1) High-speed switching (2) Small gate charge: QSW = 6.8 nC (typ. ) (3) Small output charge: Qoss = 20 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN7R006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-12 2016-06-30 Rev.1.