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TPN7R006PL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge: QSW = 6.8 nC (typ. ) (3) Small output charge: Qoss = 20 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN7R006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-12 2016-06-30 Rev.1.

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R006PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 6.8 nC (typ.) (3) Small output charge: Qoss = 20 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN7R006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-12 2016-06-30 Rev.1.0 TPN7R006PL 4.
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