TPW4R008NH Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 18 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 m A) 3. Packaging and Internal Circuit DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2014-09 2019-10-21 Rev.4.0 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) (Bottom drain) Drain current (pulsed) (t = 100 µs) (Note 1) Power dissipation (Tc = 25 ) (Bottom drain) Power dissipation Power dissipation (Note 3) (Note 4) Single-pulse avalanche energy (Note...