TPW1R306PL
TPW1R306PL is Silicon N-channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
DSOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2015-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-10
2019-10-21...
